| 摘要 |
PURPOSE:To prevent the generation of cracks of resist pattern even on silicon dioxide by developing the resist by bringing it into contact with a developer after the resist is brought into contact with the solvent which does not dissolve a low-molecularlized part. CONSTITUTION:In the ordinary developing stage for obtaining the positive electronic beam resist pattern by irradiating the resist consisting essentially of 2-cyanoacrylic acid cyclohexyl polymer with an electronic beam and by dissolving selectively the low-molecularlized part resulted in a main chain fission in a developer, the low-molecularlized part is brought into contact beforehand with the solvent which does not dissolve the polymer part. In this case, as the solvent which does not dissolve the low-molecularlized 2-cyanoacrylic acid cyclohexyl polymer by irradiation with the electronic beam, alcohols such as methanol, ethanol, 2-propanol, butanol, cellosolves such as ethyl cellosolve and hydrocarbons such as cyclohexane are usable. |
