| 摘要 |
PURPOSE:To prevent silicon oxide containing impurities from absorbing moisture in the atmosphere to produce deposits therein. CONSTITUTION:A hydrophobic molecular layer 8 having hydrophobic group of methyl, ethyl, or the like is formed on the surface of silicon oxide, i.e., a BPSG film 4, deposited on a semiconductor substrate 1 through silylating reaction (silyl having hydrophobic group of methyl, ethyl, or the like reacts on an OH group to substitute the hydrophobic group for H of the OH group thus producing -O-Si(CH3)3 or the like) in order to prevent moisture absorption of the BPSG film 4. When a water molecule arrives at the surface of the hydrophobic molecular layer 8 composed of molecules having hydrophobic group, ice-like structure is formed because of the hydrophobic group and blocks arrival of the water molecule to the surface of the BPSG film 4. This method prevents moisture absorption of the BPSG film 4 and thereby prevents production of deposits.
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