发明名称 |
Method of making a semiconductor memory device |
摘要 |
A semiconductor substrate according to the present invention includes a first semiconductor substrate of a first conductivity type, an insulating film selectively formed in the first semiconductor substrate to define an exposed surface region, and a second semiconductor substrate of a second conductivity type opposite to the first conductivity type being bonded to the first semiconductor substrate. A DRAM cell formed by using the semiconductor substrate includes a trench capacitor formed in the first semiconductor substrate through both the second semiconductor substrate and the exposed surface region, and a transfer transistor formed in the second semiconductor substrate.
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申请公布号 |
US5302542(A) |
申请公布日期 |
1994.04.12 |
申请号 |
US19930056900 |
申请日期 |
1993.05.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KISHI, KOICHI;SAWADA, SHIZUO |
分类号 |
H01L27/10;H01L21/762;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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