| 摘要 |
PURPOSE: To provide a highly practical method, which uses grinding/polishing equipment used in many chip manufacturing equipment, so as to obtain an extremely flat wafer at a relatively low cost. CONSTITUTION: Oxide layers 3 and 4 are formed on the major planes of a handle wafer 2. An operation wafer 1 is bonded on the handle wafer 2 in insulating condition, and a bonded wafer 5 having the operation wafer 1, the handle wafer 2 and an exposed oxide layer 4 is formed. The operation wafer 1 is thinned to a prescribed thickness using the oxide layer 4 as a reference flat plane, and both the major planes of the bonded water 5 are polished. Generally, the planes are polished by using an etching material which selectively removes the operation wafer 1 from the oxide layers 3 and 4.
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