SEMICONDUCTOR DEVICE AND MAKING METHOD THEREOF

摘要

Semiconductor device comprising a device isolating region by trenches having the same or different widths on a semiconductor substrate, wherein an active region which is located as an island-shape on the semiconductor substrate having a boundary line with the device isolation region comprises trenches formed with a predetermined width along the outer wall of said trench, planaized insulating layers formed on the inactive region of the substrate between trenches which wrap another active region, spacers formed by an insulating material which fills up trenches, thereby accomplishing a high density semiconductor device.