| 摘要 |
depositing a pad oxide layer, a polysilicone layer and a nitride layer; coating a photoresist and etching a device region from the device isolation region; oxidizing said etched device isolation region to form a field oxide layer; coating photoresist on the whole surface; patterning said photoresist by photolithography to form an opening portion on said field oxide layer and etching back said field oxide layer to a predetermined thickness; depositing an oxide layer or BPSG layer on said field oxide layer and injecting impurities into said device isolation region for a channel stopper by ion injecting method; etching said oxide layer or BPSG layer, stripping said nitride layer, polysilicone layer and partial etching the field oxide layer, thereby preventing diffusion of impurities and improving isolation characteristics between devices.
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