| 摘要 |
In a process according to the present invention, a polysilicon gate electrode and a high resistive polysilicon strip are simultaneously patterned on an active area and on a thick field oxide film, respectively, and the gate electrode and the polysilicon strip are covered with thin silicon oxide films, respectively, then impurities being doped in the active area to form source and drain regions, then the thin silicon oxide film being removed from the gate electrode, then a refractory metal silicide film being formed on the gate electrode, however, the formation of the refractory metal silicide film does not affect the polysilicon strip, because the thin silicon oxide film is left thereon, which results in maintaining the polysilicon strip in the high resistivity and, accordingly, in that the polysilicon strip provides a resistor with a large resistance but occupies a small amount of area.
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