Solid-state imaging device having a plurality of charge transfer electrodes formed in a serpentine pattern

摘要

A solid-state imaging device includes: a semiconductor layer having a top surface; a plurality of first charge transfer electrodes formed on the semiconductor layer and extending in a serpentine pattern in a first direction at a prescribed cycle, the first direction being substantially parallel with the top surface of the semiconductor layer; a plurality of second charge transfer electrodes formed on the semiconductor layer and extending in a serpentine pattern in the first direction at a prescribed cycle; a plurality of charge transfer sections formed in the semiconductor layer, and extending in a serpentine pattern in a second direction, the second direction being substantially perpendicular to the first direction; and a plurality of photoelectric converters formed in areas of the semiconductor layer bounded by the first and second charge transfer electrodes, each photoelectric converter provided for generating a signal charge in response to incident light, and for supplying the signal charge to an adjacent one of the charge transfer sections.