Amplifiers with a short phase path, packaged RF devices for use therein, and methods of manufacture thereof

摘要

An embodiment of a packaged radio frequency (RF) amplifier device includes a transistor and an inverse class-F circuit configured to harmonically terminate the device. The transistor has a control terminal and first and second current carrying terminals. The control terminal is coupled to an input lead of the device, and the first current carrying terminal is coupled to a voltage reference. The inverse class-F circuit is coupled between the second current carrying terminal and an output lead. The inverse class-F circuit includes a shunt circuit coupled between a cold point node and the voltage reference, where the cold point node corresponds to a second harmonic frequency cold point for the device. The shunt circuit adds a shunt negative susceptance at a fundamental frequency F0 to the inverse class-F circuit.

主权项

1. A packaged radio frequency (RF) amplifier device comprising:
an input lead; an output lead; a first transistor that includes a control terminal and first and second current carrying terminals, wherein the control terminal is coupled to the input lead, the first current carrying terminal is coupled to a voltage reference, and the first transistor is characterized by a first drain-source capacitance; and an inverse class-F circuit coupled between the second current carrying terminal and the output lead and configured to harmonically terminate the RF amplifier device, wherein the inverse class-F circuit includes
a first shunt circuit coupled between a first cold point node and the voltage reference, wherein the first cold point node corresponds to a second harmonic frequency cold point for the RF amplifier device, and wherein the first cold point node is located on a signal path between the second current carrying terminal and the output lead, and the first shunt circuit adds a shunt negative susceptance to the inverse class-F circuit at a fundamental frequency of the RF amplifier device, anda second shunt circuit coupled between the first cold point node and the voltage reference, wherein the second shunt circuit is resonant at the second harmonic frequency.