| 摘要 |
PURPOSE:To provide an epitaxial wafer with which an epitaxial later, having stabilized impurity concentration, can be formed, the contamination of heavy metal can be lessened, and a semiconductor device, having uniform and excellent characteristics, can be formed. CONSTITUTION:After As 12 and C 13 have been ion-implanted on an Si wafer 11, an epitaxial layer 14 is formed on the wafer 11. Because As has a small diffusion coefficient, the diffusion of As 12 to an epitaxial layer 14 from the Si wafer 11 is small and the impurity concentration of the Si wafer 11 comes near to uniformity by the As 12 ion-implantation. Also, a gettering site is formed on the Si wafer 11 by C 13. |
