| 摘要 |
PURPOSE:To provide a method of stably forming a contact hole, wherein a resist pattern provided with a tapered plane is formed through a double exposure way, and the contact hole is formed through dry etching using the resist pattern concerned as a mask preventing a resist film from being lessened in thickness at development. CONSTITUTION:An insulating film 12 is covered with a resist film 13, an insoluble layer 14 is formed on the surface of the resist film 13 through an alkali treatment with developing solution, a full-surface exposure process and a mask exposure process are successively executed, and the insoluble layer 14 is enhanced in insolubility by a baking treatment. Then, a resist pattern 16 provided with a tapered plane is formed by development, the insulating film 12 is subjected to a dry etching process using the resist pattern 16 as a mask for the formation of a contact hole 17. |
