| 摘要 |
PURPOSE: To improve productivity and yield of an integrated circuit, including a field effect device. CONSTITUTION: This integrated circuit consists of a bipolar transistor(TR) and a field effect transistor(FET), the base of the FET and the base of the bipolar TR are formed of a base epitaxial layer 16, and then the FET and bipolar TR are formed into a structure with a common material. Alternatively, an integrated circuit consists of a bipolar TR composed of a substrate 10, a subcollector layer 12, a collector layer 14, a base layer 16, an emitter layer 18, electric contacts 20, 28, and 35 for the emitter layer 18, a base contact 34 for the base layer 16, and a collector contact 42 for the subcollector layer 12 and an FET composed of 1st gate contacts 20 and 30, a 1st source contact 36 for the base layer 16, and a 1st drain contact 37 for the base layer 16.
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