Tunneling nanotube field effect transistor and manufacturing method thereof

摘要

A tunneling nanotube field effect transistor includes: an insulating layer disposed on a substrate; a gate electrode disposed on the insulating layer; a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode; and a carbon nanotube extending through the gate electrode, wherein the carbon nanotube is supported by the source electrode, the gate electrode, and the drain electrode, wherein the carbon nanotube includes a first portion adjacent to the source electrode and a second portion adjacent to the drain electrode, and wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion.

主权项

1. A tunneling nanotube field effect transistor comprising:
an insulating layer disposed on a substrate; a gate electrode disposed on the insulating layer; a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode; a carbon nanotube extending through the gate electrode, wherein a gap between the carbon nanotube and the insulating layer ranges from about 1 nm to about 7 nm; and a spacer disposed on the insulating layer on both sides of the gate electrode and surrounding the carbon nanotube, wherein the carbon nanotube is supported by the source electrode, the gate electrode, and the drain electrode, wherein the carbon nanotube includes a first portion adjacent to the source electrode and a second portion adjacent to the drain electrode, wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion, and wherein a direction of electron tunneling across the carbon nanotube between the source electrode and the drain electrode is determined by a voltage applied to the gate electrode and conductivity types of the first portion and second portion of the carbon nanotube.