发明名称 Light-emitting semiconductor chip
摘要 A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
申请公布号 US9530931(B2) 申请公布日期 2016.12.27
申请号 US201514662037 申请日期 2015.03.18
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 Peter Matthias;Meyer Tobias;Walter Alexander;Taki Tetsuya;Off Juergen;Butendeich Rainer;Hertkorn Joachim
分类号 H01L29/06;H01L33/06;H01L33/04;H01L33/14;H01L33/24;H01L33/32;H01L33/22;H01L33/38 主分类号 H01L29/06
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A semiconductor chip comprising: a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising: an n-conductive multilayer structure, wherein a doping profile is formed in the n-conductive multilayer structure, the doping profile comprising at least one doping peak;a p-conductive semiconductor layer; andan active region provided for generating radiation, the active region arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer; and a contact layer; wherein the semiconductor body has a recess that extends through the p-conductive semiconductor layer and the active region into the n-conductive multilayer structure, and wherein the contact layer electrically contacts the n-conductive multilayer structure in the recess; and wherein the recess penetrates the doping peak.
地址 Regensburg DE