发明名称 |
Light-emitting semiconductor chip |
摘要 |
A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. |
申请公布号 |
US9530931(B2) |
申请公布日期 |
2016.12.27 |
申请号 |
US201514662037 |
申请日期 |
2015.03.18 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
Peter Matthias;Meyer Tobias;Walter Alexander;Taki Tetsuya;Off Juergen;Butendeich Rainer;Hertkorn Joachim |
分类号 |
H01L29/06;H01L33/06;H01L33/04;H01L33/14;H01L33/24;H01L33/32;H01L33/22;H01L33/38 |
主分类号 |
H01L29/06 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A semiconductor chip comprising:
a semiconductor body with a semiconductor layer sequence, the semiconductor layer sequence comprising:
an n-conductive multilayer structure, wherein a doping profile is formed in the n-conductive multilayer structure, the doping profile comprising at least one doping peak;a p-conductive semiconductor layer; andan active region provided for generating radiation, the active region arranged between the n-conductive multilayer structure and the p-conductive semiconductor layer; and a contact layer; wherein the semiconductor body has a recess that extends through the p-conductive semiconductor layer and the active region into the n-conductive multilayer structure, and wherein the contact layer electrically contacts the n-conductive multilayer structure in the recess; and wherein the recess penetrates the doping peak. |
地址 |
Regensburg DE |