Semiconductor device and method of manufacturing the same, and electronic apparatus

摘要

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

主权项

1. An electronic apparatus, comprising:
an imaging device including:
a first semiconductor substrate having a light-incident side and including a pixel section, the pixel section including a photodiode and at least one of a transfer transistor, a reset transistor, or an amplification transistor,a second semiconductor substrate having at least a part of a signal processing circuit, wherein the first semiconductor substrate and the second semiconductor substrate are bonded to each other,a first multi-wiring layer formed at a side opposite to the light-incident side of the first semiconductor substrate, wherein the first multi-wiring layer is electrically connected to the pixel section,a second multi-wiring layer formed at a first side of the second semiconductor substrate, wherein the side opposite to the light-incident side of the first semiconductor substrate and the first side of the second semiconductor substrate face each other, and wherein the signal processing circuit includes at least a plurality of wires of the second multi-wiring layer and a plurality of transistors,a through-connection conductor extending from the light-incident side of the first semiconductor substrate to the second multi-wiring layer through the first semiconductor substrate in a peripheral section other than the pixel section, anda first insulating layer disposed above the through-connection conductor,wherein,
the through-connection conductor extends to the second multi-wiring layer by penetrating the first semiconductor substrate, andthe through-connection conductor has a first connection point connected to a wiring in the first multi-wiring layer and a second connection point connected to a wiring in the second multi-wiring layer; and a lens configured to direct light to the light-incident side of the first semiconductor substrate.