| 摘要 |
A layered structure includes a first electrode layer on an insulating substrate, a first insulating film on the first electrode layer, a second electrode layer on the first insulating film, a second insulating film on the second electrode layer, and a third electrode layer on the second insulating film. The first electrode layer, an opening of the first insulating film, the second electrode layer, an opening of the second insulating film, and the third electrode layer have a stack structure that causes the first electrode layer and the second electrode layer to be connected. The third electrode layer relays or reinforces, through the opening of the second insulating film, a connection between the first electrode layer and the second electrode layer formed on the first insulating film. |
| 主权项 |
1. A layered structure comprising:
a first electrode layer on an insulating substrate, the first electrode layer including a gate wire; a gate electrode connected to the gate wire; a capacitor wire; and a capacitor electrode connected to the capacitor wire; a first insulating film on the first electrode layer; a second electrode layer on the first insulating film, the second electrode layer including a source wire; a source electrode connected to the source wire; a drain electrode; and a pixel electrode connected to the drain electrode; a semiconductor located between the source electrode and the drain electrode, the gate electrode overlapping the semiconductor via the first insulating film, the capacitor electrode overlapping the pixel electrode via the first insulating film; a second insulating film on the second electrode layer and having an opening on the pixel electrode; a third electrode layer on the second insulating film, the third electrode layer comprising a plurality of reinforcement electrodes and including an upper pixel electrode connected to the pixel electrode via the opening, and a floating-gate thin film transistor, wherein the first electrode layer, an opening of the first insulating film, the second electrode layer, an opening of the second insulating film, and the third electrode layer have a stack structure that causes the first electrode layer and the second electrode layer to be connected, the third electrode layer relaying or reinforcing, through the opening of the second insulating film, a connection between the first electrode layer and the second electrode layer, a common electrode around the thin film transistor array, the common electrode comprising a gate common electrode and a source common electrode; gate protective elements located between the gate wires and the gate common electrode; source protective elements located between the source wires and the source common electrode, the common electrode being directly connected to a ground potential or the ground potential via a resistor, wherein:
the gate common electrode is included in the second electrode layer,the source common electrode is included in the first electrode layer, at least one of the gate protective elements and the source protective elements comprises:
a pair of diode-connected thin film transistors connected in parallel to each other such that one of the diode-connected thin film transistors is opposite in direction to the other thereof;a pair of diode-connected thin film transistors connected in series to each other such that one of the diode-connected thin film transistors is opposite in direction to the other thereof; ora floating-gate thin film transistor, and the third electrode layer relays or reinforces, as the connection between the first electrode layer and the second electrode layer, at least one of:
a short-circuit portion between a gate electrode and a source electrode of the gate protective element;a short-circuit portion between a gate electrode and a source electrode of the source protective element;a connection portion between the gate wire and the gate protective element; anda connection portion between the source protective element and the source common electrode. |
