| 摘要 |
<p>PURPOSE:To prevent the size reduction of patterns in size changing parts and to enable the use of the patterns near the resolution threshold even for the intricate patterns by arranging light shielding patterns within the large transmission patterns neat the junctures of transmission patterns near the resolution threshold and the large transmission patterns. CONSTITUTION:The short size A of the first aperture pattern 2 to be used for stepping and to be resolved is A=lambda/(2XNA) or below (where lambda = exposing wavelength, NA = numerical aperture of a projecting lens). The pattern arranging with the light shielding pattern 4 in proximity to the juncture with the pattern 2 in the second aperture pattern 3 arrayed in connection to the pattern 2 is included in the case of the synthetic graphic patterns in which a level difference exists between the above-mentioned first aperture pattern and the second aperture pattern 3. The excess light in the pattern neck part is, therefore, suppressed and the intensity of unnecessary diffracted light is lowered. As a result, the generation of the constriction of the patterns is prevented and the arrangement of the patterns adjacent to each other at fine spacings is possible. Dealing with the intricate patterns is possible as well.</p> |
