| 摘要 |
PURPOSE:To obtain a high-accuracy wiring board wherein it can comply with the high integration of a semiconductor device by a method wherein an excimer laser whose energy density is larger than that of an excimer laser used to remove an insulating layer is irradiated, a metal layer is cut off and a wiring board is cut off from a laminated board. CONSTITUTION:A laminated board 1 is formed of a copper foil 2, of an insulating layer 5 which is composed of a thermoset polyimide layer 3 or the like and a thermoplastic polyimide layer 4 or the like and of a base-body metal layer 6 such as a 42 alloy or the like. A groove 7 is formed in the base-body metal layer 6. An insulating layer in the part of the groove is exposed, also internal removal parts 9 to be removed from the laminated board at the inside of a wiring board 8 are removed, and the insulating layer is exposed. An excimer laser is irradiated, the insulating layer is removed, an excimer laser whose energy density is larger than that of the excimer laser used to remove the insulating layer is irradiated, the copper foil is removed, and the wiring board is cut off from the laminated board. Thereby, it is possible to obtain the wiring board whose wiring pattern is not cut and whose wiring pattern is not dislocated. |
