| 摘要 |
<p>PURPOSE:To enable using an EEPROM such as a flash memory and the like requiring two power supplies with the same operation as that of a EEPROM having one power supply by providing a high voltage control signal terminal which outputs a control signal controlling whether high voltage is to be applied to a high voltage supplying device or not. CONSTITUTION:This non-volatile semiconductor memory requires higher power supply voltage Vpp than power supply voltage Vcc used in reading out at the time of writing or erasing data. And this device is provided with a high voltage control signal terminal 7 which outputs a control signal controlling whether high voltage is to be supplied to a high voltage supplying device 2 or not, and outputs the control signal according to demand. Thereby, the device 2 is not required to control by a system side as performed conventionally, by accessing to the non-volatile semiconductor memory in the same way as a nonvolatile semiconductor memory of a single power supply, the non-volatile semiconductor device automatically control the device 2 according to demand. Therefore, this device may be operated with the same operation as that of a non-volatile device of a single power supply, software is not required to change.</p> |
