发明名称 MEMORY
摘要 PURPOSE:To enable the high-speed sense-operation of read-out data by constituting a sense-amplifier with a signal input differential-connection bipolar transistors and grounded base transistors connected to the collectors of the differential-connection transistors. CONSTITUTION:A voltage-to-current transducing means 1 consisting of bipolar transistors TRQ70, Q71 of the differential-connection is included in the sense- amplifier. The transducing means is composed of NPN TRs Q70, Q71 of the defferential-connection and NPN TRs Q72, Q73 of the cascade-connection. A miller effect is hardly generated since the transducing means 1 is made to be the cascade-connection of bipolar transistors in such a manner. Thus, the delay-time due to a signal source resistance and an input capacitance is remarkably shortened since the input capacitance of the means is made very small.
申请公布号 JPH06203574(A) 申请公布日期 1994.07.22
申请号 JP19930213726 申请日期 1993.08.30
申请人 HITACHI LTD 发明人 UENO MASAHIRO;KURITA KOZABURO;MASUDA IKURO;MIYAGAWA NOBUAKI
分类号 G11C11/419;G11C11/409;G11C11/416;H03K5/02;H03K19/0175;(IPC1-7):G11C11/416;H03K19/017 主分类号 G11C11/419
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