发明名称 |
Method of producing a self-aligned window at recessed intersection of insulating regions |
摘要 |
An integrated circuit structure and process relating to a self-aligned window at the recessed junction of two insulating regions formed on the surface of a semiconductor body. The window may include a trench forming an isolation region between doped semiconductor regions, or may include an electrical conductor connected to a doped semiconductor region, or may include an electrical conductor separated from doped semiconductor regions by an electrical insulator. Embodiments include, but are not limited to, a field-effect transistor, a tunnelling area for a floating gate transistor, and an electrical connection to a doped area of the substrate.
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申请公布号 |
US5334550(A) |
申请公布日期 |
1994.08.02 |
申请号 |
US19930004813 |
申请日期 |
1993.01.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCELROY, DAVID J.;LIN, SUNG-WEI;GILL, MANZUR |
分类号 |
H01L21/033;H01L21/266;H01L21/28;H01L21/308;H01L21/74;H01L21/768;H01L29/423;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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