SEMICONDUCTOR DEVICES INCLUDING SHALLOW TRENCH ISOLATION (STI) LINERS

摘要

Semiconductor devices including STI liners are provided. The semiconductor devices may include a STI trench that defines an active region in a substrate, a STI liner that extends conformally along side walls and a bottom surface of the STI trench, a device isolation film that is on the STI liner and fills up at least a part of the STI trench, a first gate structure that is disposed on the active region, and a second gate structure that is spaced apart from the first gate structure. The second gate structure may include a gate insulating film contacting the device isolation film, a gate electrode on the gate insulating film, and spacers on both sides of the gate electrode. Lower surfaces of the spacers may contact an upper surface of the STI liner.

主权项

1. A semiconductor device comprising:
an active region on a substrate, the active region being defined by a shallow trench isolation (STI) trench; a STI liner conformally disposed on side walls and a bottom surface of the STI trench; a device isolation film on the STI liner, the device isolation film filling at least a part of the STI trench; a first gate structure on the active region; and a second gate structure spaced apart from the first gate structure, wherein the second gate structure includes a gate insulating film being in contact with the device isolation film, a gate electrode on the gate insulating film, and spacers on both sides of the gate electrode, and wherein lower surfaces of the spacers contact an upper surface of the STI liner.