发明名称 POSITIVE RESIST MATERIAL
摘要 PURPOSE:To provide a positive resist material for high energy beam high in sensitivity and resolution and having excellent process aptitude. CONSTITUTION:The positive resist material contains a poly(hydroxy styrene) resin (a) in which hydrogen atom of a part of hydroxyl group is substituted by t-butoxycarbonyl, a dissolution inhibitor (b) and an onium salt (c) so as to be 0.55<=(a), 0.07<=(b)<=0.40, 0.005<=(c)<=0.15 and (a)+(b)+(c)=1 by wt. percent, is developed with an alkaline aq. solution and is sensitive to high energy beam and the onium salt (c) is expressed by a general formula, (R)2I<+>M. In the formula, R is aromatic group, at least one of Rs is phenyl group substituted by beta- hydroxy ethoxy group and each of Rs can be the same or different. And M is an anion.
申请公布号 JPH06236034(A) 申请公布日期 1994.08.23
申请号 JP19930041716 申请日期 1993.02.08
申请人 SHIN ETSU CHEM CO LTD;NIPPON TELEGR & TELEPH CORP <NTT> 发明人 YAGIHASHI FUJIO;TAKEMURA KATSUYA;TAKAMIZAWA MINORU;TANAKA HARUYORI;KAWAI YOSHIO;MATSUDA KOREHITO
分类号 C08F12/14;C08F12/00;G03F7/004;G03F7/029;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 C08F12/14
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