OHMIC CONTACT STRUCTURE OF HIGH INTEGRATED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

摘要

The present invention relating to an ohmic contact structure for connection of an electrode to a high integrated semiconductor device and a method for making the same, may be usefully applied to low resistance of electronic lines and high reliability in high integrated semiconductor devices, by forming selectively on a contact hole a material having a smaller bandgap than that of a substrate material to lower a contact resistance and by forming a material of hetero-junction structure under the above material to minimize stress and strain between a metal and a semiconductor. 18