| 摘要 |
PURPOSE:To improve the shape of pattern and to attain high definition by applying a positive or negative chemical-sensitization resist contg. a photooxygenating and optionally a cross-linking agent on a substrate and treating the resist in the gas atmosphere of an acid quenching compd. CONSTITUTION:Dry nitrogen 6 is bubbled through an acid quenching compd. 4 which is vaporized, and the vapor is introduced into a closed vessel 2 at room temp. to form an atmosphere saturated with the compd. 4. A substrate 1 coated with a positive or negative chemical-sensitization resist is then allowed to stand in the vessel 2, and the resist is treated in the gas atmosphere of the compd. 4. The treating time is appropriately selected in accordance with the order of treating stage and the combination of the composition of the resist and the compd. For example, the treating time is appropriately controlled to 1 to 3 sec when p-t-butoxycarbonylhydroxystyrene and hexamethyldisilazane are used. |
