| 摘要 |
The method includes the steps of applying a photosenstive film on a GaAs substrate to form a photosenstive film pattern theron to etch the substrate by using a wet etching method, sequentially forming an initial GaAs layer (6), an AlAs layer (7) and an active GaAs layer (8) on the etched substrate by using an MBE process, forming an ohmic contact metal (5) on the epitaxial layers (6,7,8), and selectively etching the Al-As layer (7) by using HCl or buffered oxide etchant (BOE), thereby forming an air gap (9) to isolate the GaAs active layer (8) from the substrate to prevent the current leakage between the buffered film and substrate.
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