| 摘要 |
The method includes the steps of forming first and second insulating layers (13,15) on a substrate (11) to etch the layers (11,13,15) to form an aperture (A) thereinto to form spacers (17,19) on the side wall of the aperture (A), forming a first silicon layer (23) of high concentration, a second silicon layer (25) of medium (low) concentration and an insulating layer (27) of into the aperture (A), removing the layers (15,17,19,23,13,27) to form an oxide film (29,31) on the substrate (11) and layer (23), forming a poly silicon layer (33) into the space between the substrate (11) and the layer (25), and oxidizing the layer (33) to form a field oxide layer (35), thereby using an SOI structure to reduce the number of masking works.
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