| 摘要 |
PURPOSE: To measure the temp. of a wafer with an accuracy within±10 deg.C by averaging the local variation of the lamp output through changing of the installation of an optical pipe probe, and specifically modeling of the radaitive environment in a processing chamber. CONSTITUTION: Between a wafer 120 and a lamp 140, a wafer probe 100 is installed in such an arrangement that its inlet surface 150 is facing the wafer 120 which is located in a vessel 130 made of mercury, and the surface of the wafer 120 is sampled at a three-dimensional angle ofΩ1 . A lamp probe 110 is positioned between the lamp 140 and the internal surface 170 adjacent to a diffusive reflecting surface portion 180, and the inlet surface 190 is arranged as facing the internal surface 170 existing within a three-dimensional angle ofΩ2 and the surface is sampled. To obtain admissible approximation to the hemispherical reflectance of the wafer 120, it is desirable thatΩ2 >Ω1 , and if this condition is met, the sampling region of the lamp probe 110 attains approx. ten times as large as the sampling region of the wafer probe 100, and it is possible to average the local variation of the output from the lamp 140.
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