发明名称 |
PHOTOSESITIVE MATERIALS FOR PHOTORESIST |
摘要 |
The positive photoresist is useful for integrated circuits in microelectronic devices due to the good resolution and contrast. The positive photoresist consists of (A) 10-50 % quinonediazide group as a photoactive material; (B) 20-90 % mixture of cresol novolac resin and polyhydroxy stylene as resin binder; (C) 0-10 % additives.
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申请公布号 |
KR940011202(B1) |
申请公布日期 |
1994.11.26 |
申请号 |
KR19910010106 |
申请日期 |
1991.06.18 |
申请人 |
CHEIL SYNTHETICS INC. |
发明人 |
KIM, KWANG - TAE;KIM, JONG - RAK;KIM, DAE - JIN |
分类号 |
G03F7/22;(IPC1-7):G03F7/22 |
主分类号 |
G03F7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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