发明名称 PHOTOSESITIVE MATERIALS FOR PHOTORESIST
摘要 The positive photoresist is useful for integrated circuits in microelectronic devices due to the good resolution and contrast. The positive photoresist consists of (A) 10-50 % quinonediazide group as a photoactive material; (B) 20-90 % mixture of cresol novolac resin and polyhydroxy stylene as resin binder; (C) 0-10 % additives.
申请公布号 KR940011202(B1) 申请公布日期 1994.11.26
申请号 KR19910010106 申请日期 1991.06.18
申请人 CHEIL SYNTHETICS INC. 发明人 KIM, KWANG - TAE;KIM, JONG - RAK;KIM, DAE - JIN
分类号 G03F7/22;(IPC1-7):G03F7/22 主分类号 G03F7/22
代理机构 代理人
主权项
地址