发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To form a chemically amplifying type resist on an undercoat layer even when the undercoat layer is a coating type silicon oxide film by treating the surface of the undercoat layer with an alkaline solution and then forming the chemically amplifying type resist on the undercoat layer. CONSTITUTION:This chemically amplifying type resist to be used for the pattern forming method is obtained by treating the surface of the undercoat layer with the alkaline solution and forming it on the undercoat layer. When the coating type silicon oxide film is used, each kind available in the market as SOG is used. The coating type silicon oxide film means the film formed by treating a coating material having a silanol group. It is preferred to select SOG not high in cross-linking density and it is most preferred to use as the alkaline solution for the surface treatment an aqueous TMAH solution, but other alkaline solutions may be used.
申请公布号 JPH06337522(A) 申请公布日期 1994.12.06
申请号 JP19930151478 申请日期 1993.05.29
申请人 SONY CORP 发明人 SAITO MASAO
分类号 G03F7/11;G03F7/26;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/11
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