| 摘要 |
PURPOSE: To provide a method for forming a LOCOS vertical-type MOSFET easily from silicon carbide without requiring stages of difficult diffusion, ion implantation, and wet etching. CONSTITUTION: A LOCOS silicon carbide vertical-type MOSFET, formed on a silicon carbide substrate 44, has the parts of epitaxial layers 57, 59, and 60 for defining various kinds of transistor electrodes 83, 85, and 87 in place of the definition of electrodes due to injection and diffusion. The diffusion speed in the silicon carbide is fast, thus executing the operation of LOCOS, after a doped epitaxial layer has been formed.
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