发明名称 |
Method of making semiconductor devices having two-layer gate structure |
摘要 |
The present invention includes a method of forming semiconductor oxide layers and, in particular, gate oxide layers, in MOS semiconductor devices formed on silicon substrates. The method includes the steps of forming a first silicon oxide sublayer on the silicon substrate in an atmosphere including primarily oxygen, and forming a second silicon oxide sublayer over the first sublayer in an atmosphere including primarily nitrous oxide (N2O). Preferably, the first and second sublayers represent 80 percent and 20 percent, respectively, of the silicon oxide layer.
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申请公布号 |
US5393683(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19920887785 |
申请日期 |
1992.05.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MATHEWS, VIJU K.;DENNISON, CHARLES H.;FAZAN, PIERRE;MADDOX, ROY;DITALI, AKRAM |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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