Semiconductor storage device (memory)

摘要

In a semiconductor storage device, the separation of the bit lines (15) is larger than the separation of the word lines (4), and a memory node contact (17) is arranged in each rectangular surface which is enclosed by the bit lines (15) and the word lines (4). The separation between the mid-points of adjacent memory nodes (17) and the separation between the mid-points of a bit line contact (16) and an adjacent memory node contact (17) are both larger than the separation of the word lines (4). By virtue of this structure, the planar surface area per unit storage cell can be increased, the positioning margin or overlap margin between the memory node (11) and the memory node contact (17) can be broadened, a short circuit between the bit line (15) and the memory node contact (16) is prevented, and a memory cell structure with high production yield and high reliability can thereby be obtained. <IMAGE>