| 摘要 |
PURPOSE: To obtain a semiconductor device comprising a MOSFET in which parasitic bipolar action is blocked. CONSTITUTION: The semiconductor device comprises a MOSFET formed in a first conductivity type region, and an additional element R coupled between the gate electrode G and the gate input terminal GT thereof. The additional element has a region provided in a second region of opposite conductivity type within the first region and a parasitic transistor B is formed by that region and the first and second regions. First and second rectifier elements are provided on an insulation layer while being connected between the gate input terminal GT and the base and emitter regions of the parasitic transistor, respectively. When the sign of differential voltage between the source and gate electrodes of the MOSFET is reversed, the first and second rectifier elements are biased forward to decrease the base-emitter voltage of the parasitic transistor thus prohibiting turn on thereof. |
