| 摘要 |
PURPOSE:To simultaneously measure plural solid-state imaging devices by setting a voltage to be impressed to plural second conductive wells to a voltage for suppressing a signal charge with the first conductive semiconductor substrate voltage of the solid-state imaging device as a reference. CONSTITUTION:With the voltage of an (n) type semiconductor substrate 7 as the reference, the voltage to be impressed to the reference electrode of a first element is set to a value for suppressing blooming. Next, at time t1 and t2, pulses phiG1 and phiG3 are turned to a high level in comparison with a reference voltage, and the signal charge stored in a photodiode 1 is read out to a vertical transfer part 3. Next, at time t3, pulses phiG1-phiG4 are turned to a transfer term, and the signal charge is transferred step by step during one horizontal blanking period. That output voltage is read and that element is inspected. At such a time, the second element is similarly inspected at the same time. |
