| 摘要 |
PURPOSE:To manufacture a semiconductor device provided with an SOI substrate enhanced in degree of integration by a method wherein not only a problem such as a decrease in breakdown strength between a source and a drain in a conventional SOI field effect transistor is solved, but also body contact regions which impede an enhancement in degree of integration are effectively disposed. CONSTITUTION:In this semiconductor device, a field oxide film 10 is formed so as to reach to the primary surface of a buried oxide film 4, covering the main surface of an SOI layer 5. By this setup, a PMOS active region 6 of SOI and an NMOS active region 8 of SOI can be completely, electrically isolated from each other. Therefore, this semiconductor device can be perfectly protected against a latch-up phenomenon. |
