发明名称 MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To precisely form a GAMMA-shaped gate electrode wherein an eaves protrude only on the source electrode side, while the alignment margin for forming the electrode is increased. CONSTITUTION:After an aperture part 5 for forming a gate electrode is formed by laminating a silicon oxide film 2 and an alpha-Si film 3 on a GaAs substrate 1, only the alpha-Si film 3 which is in contact with the aperture part 5 on the source electrode side is selectively eliminated. In the aperture part, a WSi.TiN.Pt film 6 is formed, and coated with an organic film. The whole surface is etched back, and the uppermost WSi.TiN.Pt film 6 is eliminated. The first metal film 6 left in the aperture part is used as a plating electrode, and an Au film is plated. Thereby a GAMMA-shaped gate electrode 8 wherein an eaves protrude only on the source electrode side is formed.
申请公布号 JPH0778835(A) 申请公布日期 1995.03.20
申请号 JP19930221565 申请日期 1993.09.07
申请人 NEC CORP 发明人 OIKAWA YOICHI
分类号 H01L29/812;H01L21/285;H01L21/338;H01L29/423;H01L29/47;(IPC1-7):H01L21/338 主分类号 H01L29/812
代理机构 代理人
主权项
地址
您可能感兴趣的专利