摘要 |
PURPOSE:To precisely form a GAMMA-shaped gate electrode wherein an eaves protrude only on the source electrode side, while the alignment margin for forming the electrode is increased. CONSTITUTION:After an aperture part 5 for forming a gate electrode is formed by laminating a silicon oxide film 2 and an alpha-Si film 3 on a GaAs substrate 1, only the alpha-Si film 3 which is in contact with the aperture part 5 on the source electrode side is selectively eliminated. In the aperture part, a WSi.TiN.Pt film 6 is formed, and coated with an organic film. The whole surface is etched back, and the uppermost WSi.TiN.Pt film 6 is eliminated. The first metal film 6 left in the aperture part is used as a plating electrode, and an Au film is plated. Thereby a GAMMA-shaped gate electrode 8 wherein an eaves protrude only on the source electrode side is formed.
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