| 摘要 |
PURPOSE:To transfer a resist film pattern, as it is, to a material being etched by subjecting the resist film to exposure and development to form a resist film pattern, subjecting an antireflection film exposed from the resist film pattern containing a compound shown by a specified formula to irradiation with far infrared rays and development, and then subjecting a film to selective etching. CONSTITUTION:An antireflection film 3 shown by a formula (where, R1, R2 represent hydrogen, aryl group, alkyl group, halogen, alicyclic group) and a resist film 4 are formed on a silicon substrate 1 on which an Al layer 2 is formed. The resist film 4 is then irradiated with ultraviolet rays and developed to form a pattern of the resist film 4. An antireflection film 3 exposed from the resist film pattern 4 is then irradiated with far infrared rays and developed thus removing the region irradiated with the far infrared rays. Subsequently, the Al layer 2 is etched selectively to obtain a wiring pattern. This method allows direct transfer of the resist film pattern to a material being etched. |
