Data input buffer for a semiconductor memory device

摘要

The present invention relates to a data input buffer for a semiconductor memory device and, in particular, to a data input buffer which can operate stably in spite of a change in the supply voltage Vcc. A data input buffer for a semiconductor memory device comprises: a supply-voltage measuring circuit for measuring the level of an externally applied supply voltage and for generating a supply-voltage measuring signal, a first conductive path, which connects an internal supply voltage and a level-reading node in order to control the amount of current therein in accordance with the supply-voltage determining signal, and a second conductive path, which connects the level-reading node to an earth potential in order to control the amount of current therein in accordance with the supply-voltage determining signal.