| 摘要 |
A semiconductor laser device comprising, a first clad layer of the first conductivity type semiconductor crystal deposited on a first electrode layer, an active layer, a second clad layer formed of a semiconductor crystal of a second conductivity type, a current barrier layer having a stripe-like current inlet opening, a second electrode layer formed of a semiconductor crystal of the second conductivity type, and disposed on the current barrier layer and on the electric current inlet opening. A first electrode is formed on the second electrode layer. A second electrode is formed on the bottom surface of the first electrode layer. Between the current barrier layer and the second clad layer is formed a photoelectric current barrier layer formed of a semiconductor crystal of the first conductivity type having a larger band gap than that of the active layer.
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