Protective transistor for electrostatic discharges and method for its production

摘要

Transistor for a protective circuit for electrostatic discharges which is capable of dissipating a high voltage or an overload current applied to a semiconductor device and therefore protects the semiconductor device from the high voltage or the overload current, and method for its production. The transistor for a protective circuit for electrostatic discharges has an asymmetrical charge-coupled MOS transistor structure with a heavily doped buried layer which is capable of distributing a current flow and thereby dissipating an instantaneous electrostatic discharge surge and of reducing the production of heat caused by concentration of a heavy current flow. The present invention consequently provides for improvement in the resistance characteristic against an electrostatic discharge surge.