SEMICONDUCTOR DEVICE HAVING DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF

摘要

The multilayer semiconductor device has the dielectric film of nitride film/oxide film (NO) or oxide film/nitride film/oxide film (ONO) structure. The nitride film consists of the 1st nitride film containing a regular composition of silicon and more than one layer of nitride films with the composition in which the ratio of silicon to nitrogen is above one. The thickness of the 1st nitride film constitutes 10-80% of the total thickness of nitride film, the top interface of nitride film has a silicon rich composition. The first nitride film is deposited at 650-850 or 550-750 deg.C by in situ LPCVD, low pressure chemical vapor deposition, in atmosphere of the mixed gas of disilane and NH4 in the ratio of 1:1-1:10 or 1:5-1:50.