| 摘要 |
A surface emitting photonic switching structure includes an intermediate semiconductor structure having pn junction is sandwiched between a first semiconductor multi-layer film mirror (DBR1) and a second semiconductor multi-layer film mirror (DBR2). A pair of electrodes are provided to the intermediate semiconductor structure and the pn junction therein is applied with reverse bias voltages for changing the effective optical length of the intermediate semiconductor structure so as to change transmission wavelength of light incident on the second multi-layer film mirror or the first multi-layer film mirror. The structure can be two-dimensionally integrated, be compact and is capable of operating with low voltages.
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