| 摘要 |
<p>The use of at least one downstream excited or unstable gas species forming apparatus (4), in which an initial processing gas mixture (7) is converted, for depositing a silicon-containing film on a non-metallic substrate (1) is disclosed. Said apparatus is the seat of an electrical discharge generated between a first electrode (14) and a second electrode (17) extending in a main lengthwise direction, and the initial processing gas mixture passes through the discharge transversely to the electrodes and to said main direction. The primary processing gas mixture (8) delivered through the gas outlet (6) of the apparatus includes excited or unstable gas species but is substantially free of electrically charged species, and forms, with an adjacent processing gas mixture (9, 10) which includes at least one gaseous silicon precursor and has not passed through said apparatus, a gaseous processing atmosphere (30) that is contacted with the substrate to deposit said film.</p> |
