| 摘要 |
PURPOSE: To provide a IV-IV semiconductor hetero-junction device of low sensitivity to defect formation by constituting a first semiconductor layer made of silicon and a second semiconductor layer made of silicon doped with a specified amount of carbon, and using a group IV element of relatively low concentration for a narrower forbidden bandwidth. CONSTITUTION: A semiconductor device 41 is constituted of a first crystalline semiconductor layer 43 of, substantially silicon and a second crystalline semiconductor layer 44 of, substantially silicon and a dopant for providing a narrow forbidden bandwidth characteristic. The dopant for making a forbidden bandwidth narrow is constituted of carbon for sure, while the first semiconductor layer 43 and the second semiconductor layer 44 form the first hetero-junction, with the carbon present at replacement concentration less than 1.1% in the second crystalline semiconductor layer 44. For example, a p-type base region 44 with narrowed forbidden bandwidth is formed on an n-type collector region 43, and further, an emitter region 51 is formed with an n-type polycrystalline silicon layer 49 as a dopant source, thus constituting an HBT 41.
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