Semiconductor device using transistor with silicide structure

摘要

The silicon substrate (1) comprises a pair of source/drain layers (5) on either side of the gate electrode (4). A metal silicide film (11) is deposited on the surface of the pair of the source/drain layers. The film is described as MeSi2 where Me stands for' metal'. The difference the max. and min. thickness of the metal silicide film is kept below 30 mm., pref. 25 mm. Typically the metal silicide film is deposited in top surface of the gate electrode. A metal nitride film may extend from a surface of the metal silicide film for electric connection of the surface of the pair of the source/drain layers and the gate electrode.