发明名称 DRAM Semiconductor memory operated by external clock pulse signal
摘要 The memory includes a buffer where data is held in synchronism with an external clock pulse signal (105) to safeguard a preset delay time period. A control signal ( PI TRST) is released in synchronism with the clock pulse signal during a preset time period. A stop controller stops a control signal during a given time, that would be free, in synchronisation with the clock pulse. A data output driver (95) receives the output signal of the data buffer and is controlled by the output signal of the buffer control. To the data output driver is coupled a data output device. Pref. the control signal is synchronised with the clock pulse, preceding the clock pulse handling the data according to the clock pulse signal frequency.
申请公布号 DE19503596(A1) 申请公布日期 1995.08.10
申请号 DE19951003596 申请日期 1995.02.03
申请人 SAMSUNG ELECTRONICS CO., LTD., SUWON, KR 发明人 KIM, CHULL-SOO, SUWON, KR;JANG, HYUN-SOON, SEOUL/SOUL, KR
分类号 G11C11/409;G11C7/10;G11C11/407;G11C11/417;H03K3/356;H03K19/0175;(IPC1-7):G11C7/00 主分类号 G11C11/409
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