DRAM Semiconductor memory operated by external clock pulse signal
摘要
The memory includes a buffer where data is held in synchronism with an external clock pulse signal (105) to safeguard a preset delay time period. A control signal ( PI TRST) is released in synchronism with the clock pulse signal during a preset time period. A stop controller stops a control signal during a given time, that would be free, in synchronisation with the clock pulse. A data output driver (95) receives the output signal of the data buffer and is controlled by the output signal of the buffer control. To the data output driver is coupled a data output device. Pref. the control signal is synchronised with the clock pulse, preceding the clock pulse handling the data according to the clock pulse signal frequency.
申请公布号
DE19503596(A1)
申请公布日期
1995.08.10
申请号
DE19951003596
申请日期
1995.02.03
申请人
SAMSUNG ELECTRONICS CO., LTD., SUWON, KR
发明人
KIM, CHULL-SOO, SUWON, KR;JANG, HYUN-SOON, SEOUL/SOUL, KR