发明名称 WAFER PROCESSING DEVICE AND WAFER PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing device and a wafer processing method, capable of efficiently obtaining chips of stable quality.SOLUTION: A wafer processing device by which thickness of a wafer having a modified region formed inside by laser beams is thinly processed, includes: a grinding part which grinds the back surface of the wafer by a grinding wheel in a state where the surface of the wafer is vacuum-sucked and develops fine cracks extending from the modified region while removing the modified region; and a polishing part for polishing the back surface of the wafer to be a mirror surface using polishing cloth after grinding.SELECTED DRAWING: Figure 9
申请公布号 JP2016189478(A) 申请公布日期 2016.11.04
申请号 JP20160117072 申请日期 2016.06.13
申请人 TOKYO SEIMITSU CO LTD 发明人 OSHIDA SHUHEI;SHIMIZU TASUKU;FUJITA TAKASHI;UEKIHARA AKIRA
分类号 H01L21/301;B23K26/53;B24B7/22;B24B37/10;H01L21/304 主分类号 H01L21/301
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