发明名称 |
WAFER PROCESSING DEVICE AND WAFER PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing device and a wafer processing method, capable of efficiently obtaining chips of stable quality.SOLUTION: A wafer processing device by which thickness of a wafer having a modified region formed inside by laser beams is thinly processed, includes: a grinding part which grinds the back surface of the wafer by a grinding wheel in a state where the surface of the wafer is vacuum-sucked and develops fine cracks extending from the modified region while removing the modified region; and a polishing part for polishing the back surface of the wafer to be a mirror surface using polishing cloth after grinding.SELECTED DRAWING: Figure 9 |
申请公布号 |
JP2016189478(A) |
申请公布日期 |
2016.11.04 |
申请号 |
JP20160117072 |
申请日期 |
2016.06.13 |
申请人 |
TOKYO SEIMITSU CO LTD |
发明人 |
OSHIDA SHUHEI;SHIMIZU TASUKU;FUJITA TAKASHI;UEKIHARA AKIRA |
分类号 |
H01L21/301;B23K26/53;B24B7/22;B24B37/10;H01L21/304 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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