| 摘要 |
PURPOSE: To provide the method of forming via plugs which are used as semiconductor contacts, have high adhesive forces and have low resistances. CONSTITUTION: After 1st metal layers 2 are formed on a substrate 1, 1st, 2nd and 3rd insulating layers 3, 4 and 5 are successively formed over a whole construction to level a surface. Then the insulating layers 5, 4 and 3 are etched by using a contact mask as far as a given portion of the surfaces of the 1st metal layers 2 are exposed to form via holes 6. After the via holes 6 are subjected to a pre-treatment of dry-etching, tungsten is deposited on the surfaces of the 1st metal layers 2 exposed on the bottoms of the via holes 6 to form tungsten cores 7. Then the bottoms of the via holes 6 are etched with wet- etching etchant which shows different etching rates to tungsten and the metal of the contact layer 2 respectively to form a number of etching grooves 8. Then the via holes 6 are fitted with via plugs 9. The via plugs which have high adhesive forces can be obtained by the effect of the etching grooves 8.
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