| 摘要 |
PURPOSE:To provide the positive type photoresist composition causing no striation and no inferior coat film and no poor development and superior in characteristics of deformability and wetability. CONSTITUTION:The positive type photoresist composition is formed by dissolving an alkali-soluble resin, a compound having a quinonediazido group, a compound of formula I (Rf is 6-10C fluoroalkyl; R<1> is H or 1-5 C alkyl; and R<2> is 2-5C alkyl having >=2 hydroxy), a compound of formula II (Rg is 4-20C perfluoroalkyl, and (m) is 1 or 2), or a nonionic fluorinated organopolysiloxane type compound only having perfluoroalkylated siloxane bonds and polyoxyethylene type polyether bonds in a solvent, such as alkyl-2-oxypropionate-alkyl-acetate or alkyl-2-oxypropionate-propylene-glycol-monoalkyl-ether-acetate. |
